Controlled Growth of Ordered III-Nitride Core–Shell Nanostructure Arrays for Visible Optoelectronic Devices

Epitaxial Growth of III–Nitride/Graphene Heterostructures for Electronic Devices

Epitaxial GaN films were grown by metal organic chemical vapor deposition (MOCVD) on functionalized epitaxial graphene (EG) using a thin ( 11 nm) conformal AlN nucleation layer. Raman measurements show a graphene 2D peak at 2719 cm 1 after GaN growth. X-ray diffraction analysis reveals [0001]-oriented hexagonal GaN with (0002) peak rocking curve full width at the half maximum (FWHM) of 544 arcs...

III-nitride micro-emitter arrays

III-nitride micro-emitter array technology was developed in the authors’ laboratory around 1999. Since its inception, much progress has been made by several groups and the technology has led to the invention of several novel devices. This paper provides an overview on recent progress in single-chip ac-micro-size light emitting diodes (μLEDs) that can be plugged directly into standard high ac vo...

Optoelectronic Properties of Layered Titanate Nanostructure and Polyaniline Impregnated Devices

Integrated structure of titanate nanotubes and nanosheets is investigated for their optical, electronic and optoelectronic properties when combined with HCl doped polyaniline (PANI). HR-TEM, SEM and XRD were employed for detailed morphological and microstructural understanding of the orthorhombic titanate nanostructure. Chemisorbed oxygeneous groups are probed with Raman spectroscopy which are ...

Development of Cost-Effective Native Substrates for Gallium Nitride-Based Optoelectronic Devices via Ammonothermal Growth

Controlled growth of ordered nanopore arrays in GaN.

High-quality, ordered nanopores in semiconductors are attractive for numerous biological, electrical, and optical applications. Here, GaN nanorods with continuous pores running axially through their centers were grown by organometallic vapor phase epitaxy. The porous nanorods nucleate on an underlying (0001)-oriented GaN film through openings in a SiN(x) template that are milled by a focused io...